ORCID "0000-0003-2212-199X" Fen Edebiyat Fakültesi için listeleme
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Al/Al2o3/P-Si yapısının Co gaz algılama özellikleri
Karaduman, Irmak; Demirel, Nevin; Yıldız, Dilber Esra; Acar, Selim (Gazi Üniversitesi, 2015)Bu çalışmada Al/Al2O3/p-Si yapısının gaz algılama özellikleri incelenmiştir. Al2O3 metal oksit yapısı atomik tabaka biriktirme (ALD) metoduyla üretilmiştir. Üretilen yapının farklı sıcaklıklar (300-450K) ve farklı CO gaz ... -
ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
Aydın, Sefa B.K.; Yıldız, Dilber Esra; Kanbur Çavuş, Hatice; Şahingöz, Recep (Indian Academy of Sciences, 2014)Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using ... -
Analysis of current conduction mechanism in CZTSSe/n-Si structure
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Çolakoǧlu, Tahir; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2018)In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Benzotriazole and benzodithiophene containing medium band gap polymer for bulk heterojunction polymer solar cell applications
Ünay, Hande; Akbaşoğlu Ünlü, Naime; Hizalan, Gönül; Özdemir Hacıoğlu, Şerife; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (John Wiley and Sons Inc., 2014)An alternating donor‐acceptor copolymer based on a benzotriazole and benzodithiophene was synthesized and selenophene was incorporated as π‐bridge. The photovoltaic and optical properties of polymer were studied. The ... -
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ... -
Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
Yıldız, Dilber Esra; Altındal, Şemsettin (National Institute of Optoelectronics, 2010)Dielectric properties and electrical conductivity of the Al/SiO2/p-Si (MIS) structures have been investigated in the temperature and frequency range of 80-400 K and 1 kHz-100 kHz, respectively. Experimental results show ... -
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ... -
Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
Yıldız, Dilber Esra; Kanbur Çavuş, Hatice (World Scientific Publishing Co. Pte Ltd, 2017)Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ⟨111⟩ and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I−V) characteristics ... -
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Koçyiğit, Adem; Yıldırım, Murat (Elsevier Ltd, 2020)In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ... -
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ... -
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes
Yiğiterol, Fatih; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Indian Academy of Sciences, 2018)In this study, the effect of Si3N4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current–voltage ( I−V ), capacitance–voltage ( C−V ) and conductance–voltage ( G/w−V ) ... -
Investigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films
Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room ... -
Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices
Yıldız, Dilber Esra; Karakuş, Melike; Toppare, Levent Kamil; Çırpan, Ali (Elsevier Ltd, 2014)In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to ... -
The main electrical and interfacial properties of benzotriazole and fluorene based organic devices
Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and ... -
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
Çetinkaya, Hayriye Gökçen; Yıldız, Dilber Esra; Altındal, Şemsettin (World Scientific Publishing Co. Pte Ltd, 2015)In order to see the effect of interfacial layer on electrical characteristics both Au/n-4H- SiC (MS) and Au/TiO<inf>2</inf>/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical ... -
Optimizing the organic solar cell efficiency: Role of the active layer thickness
A 2-dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating conjugated polymer, poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3]triazole)) (PFTBT), was blended with PCBM (1:1, ... -
Silafluorene-based polymers for electrochromic and polymer solar cell applications
Erlik, Ozan; Akbaşoğlu Ünlü, Naime; Hizalan, Gönül; Özdemir Hacıoğlu, Şerife; Çömez, Seda; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (John Wiley and Sons Inc., 2015)In this study, four novel silafluorene (SiF) and benzotriazole (Btz) bearing conjugated polymers are synthesized. In the context of electrochemical and optical studies, these polymers are promising materials both for ... -
Solution processable benzotriazole and fluorene containing copolymers for photovoltaic applications
2-Dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating copolymers poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) (P1), poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) ... -
Study on the electrical properties of ZnSe/Si heterojunction diode
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ...