Güncel Gönderiler: Makale Koleksiyonu
Toplam kayıt 186, listelenen: 81-100
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Tracking of SPIONs in barley (Hordeum vulgare L.) plant organs during its growth
(Springer New York LLC, 2019)Barley plants were grown in water solutions containing nutrient elements and superparamagnetic iron oxide nanoparticles (SPIONs), particularly the magnetite nanoparticles (Fe3O4; 15–20-nm particle size). No visible detection ... -
High pressure phase transition and elastic behavior of europium oxide
(National Institute of Optoelectronics, 2014)We report the questionable high pressure structural and elastic characteristics of europium oxide (EuO) up to 50 GPa with shell model potential framework by geometry optimization calculations. We determined B1→B2 phase ... -
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ... -
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
(2010)We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ... -
Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices
(Elsevier Ltd, 2014)In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to ... -
UV light activated gas sensor for NO2 detection
(Elsevier Ltd, 2014)In the present study, UV light activated gas sensor was investigated for Al/Al2O3/p-Si and Al/TiO2/Al2O3/p-Si samplesby atomic layer deposition method (ALD). Generally, in order to obtain the sensing performance, traditional ... -
Study on thermoluminescence of TlInS2 layered crystals doped with Pr
(Elsevier Ltd, 2018)Praseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in ... -
Study of the optical and photoelectrical properties of TlGaSeS layered single crystals
(Elsevier Ltd, 2017)Transmission spectra (T) of TlGaSeS crystals in the photon energy (h?) range 1.38–2.38 eV are used to determine the energy gap. The indirect band gap of 2.30 eV was established employing the photon energy dependence of the ... -
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
(Elsevier Ltd, 2019)In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were ... -
Synthesis of a benzotriazole bearing alternating copolymer for organic photovoltaic applications
(Royal Society of Chemistry, 2015)A low band gap donor–acceptor (D–A) copolymer PTBTBDT, namely, poly(2-dodecyl-4,7-di(thiophen-2-yl)-2H-benzo[d][1,2,3]triazole-alt-4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b′]dithiophene), was designed and synthesized via ... -
Crystal structures and intermolecular interactions of two novel antioxidant triazolyl-benzimidazole compounds
(Maik Nauka-Interperiodica Publishing, 2015)The crystal structures of 5-(2-(p-chlorophenylbenzimidazol-1-yl-methyl)-4-(3-fluorophenyl)-2,4-dihydro-[1,2,4]-triazole-3-thione (G6C) and 5-(2-(p-chlorophenylbenzimidazol-1-yl-methyl)-4-(2-methylphenyl)-2,4-dihydro-[1,2 ... -
The main electrical and interfacial properties of benzotriazole and fluorene based organic devices
(2013)Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and ... -
Effect of homogenization temperature on the martensitic transformation kinetics in a Fe-32%Ni-0.4%Cr alloy
(2008)Kinetic, morphological and some thermal properties of thermally induced and deformation-induced martensite were studied in a Fe-32%Ni-0.4%Cr alloy. Scanning electron microscopy (SEM), differential scanning calorimetry (DSC) ... -
Some characteristics of thermally induced martensite in Fe-30%Ni-3.6%Mo alloy
(2008)Kinetical, morphological and magnetic characteristics of thermally induced martensite in an Fe-30%Ni-3.6%Mo alloy has been studied by scanning electron microscopy, transmission electron microscopy and Mössbauer spectroscopy. ... -
Low temperature thermoluminescence behaviour of Y2O3 nanoparticles
(Chinese Society of Rare Earths, 2019)Y2O3 nanoparticles were investigated using low temperature thermoluminescence (TL) experiments. TL glow curve recorded at constant heating rate of 0.4 K/s exhibits seven peaks around 19, 62, 91, 115, 162, 196 and 215 K. ... -
Aspects of thermal martensite in a FeNiMnCo alloy
(2010)Thermal martensite characteristics in Fe-29%Ni-2%Mn-2%Co alloy were investigated with scanning electron microscopy (SEM) and Mössbauer spectroscopy characterization techniques. SEM observations obviously revealed the lath ... -
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Study on the electrical properties of ZnSe/Si heterojunction diode
(Springer New York LLC, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ... -
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
