Güncel Gönderiler: Fizik Bölümü
Toplam kayıt 191, listelenen: 181-191
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The effect of austenitizing time on martensite morphologies and magnetic properties of martensite in Fe-24.5%Ni-4.5%Si alloy
(2007)The effect of austenitizing time on the formation of martensite in Fe-24.5%Ni-4.5%Si alloy has been studied by means of transmission electronmicroscope (TEM), scanning electronmicroscope (SEM) and Mössbauer spectroscopy ... -
Investigation of the time evolution of Lane-emden-type Kanai-caldirola oscillator
(2009)In this study, we have investigated the time evolution of the first kind Lane-Emden-type Kanai-Caldirola oscillator. The total energy of the one dimensional classical harmonic oscillator with time-dependent mass is obtained. ... -
Investigation of the time evolutions of some log-periodic oscillators
(2010)We consider the time evolution of the one dimensional classical and quantum oscillator systems according to its mass and spring constant with fluctuating time. By using the SU(1,1) coherent states, the classical equations ... -
Effect of heating rate on thermoluminescence characteristics of Y2O3 nanoparticles
(Elsevier B.V., 2019)The present paper reports the results of heating rate dependencies of thermoluminescence (TL)peaks observed for Y 2 O 3 nanoparticles in the below room temperature region. TL glow curve presented six peaks around 62.5, ... -
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
(2013)Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ... -
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ... -
Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode
(John Wiley and Sons Inc., 2017)In this study, thickness-dependent current density–voltage (J–V) characteristics obtained for poly{(9,9-dioctylfluorene)?2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based ... -
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ... -
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
(American Institute of Physics Inc., 2015)In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ... -
Benzodithiophene and benzotriazole bearing conjugated polymers for electrochromic and organic solar cell applications
(Electrochemical Society Inc., 2017)Herein, alternating donor-acceptor type benzodithiophene and benzotriazole bearing copolymers were synthesized and thieno[3,2-b]thiophene and furan units were incorporated as ?-bridges. The application of these polymers ... -
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
(Canadian Science Publishing, 2018)In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ...
