Güncel Gönderiler: Fizik Bölümü
Toplam kayıt 191, listelenen: 101-120
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Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Study on the electrical properties of ZnSe/Si heterojunction diode
(Springer New York LLC, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ... -
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ... -
Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films
(Springer New York LLC, 2019)Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550–950 nm and in temperature range of 10–300 K. Transmission spectra ... -
Elastic and mechanical properties of hexagonal diamond under pressure
(Springer Verlag, 2015)Hexagonal diamond is the harder and stiffer alternative of traditional cubic diamond for today’s technology. Although several theoretical attempts have been performed to understand the ground-state elastic properties of ... -
Solution processable benzotriazole and fluorene containing copolymers for photovoltaic applications
(2012)2-Dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating copolymers poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) (P1), poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) ... -
Optimizing the organic solar cell efficiency: Role of the active layer thickness
(2013)A 2-dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating conjugated polymer, poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3]triazole)) (PFTBT), was blended with PCBM (1:1, ... -
Synthesis and characterization of oleylamine capped MnxFe1-xFe2O4nanocomposite: Magneto-optical properties, cation distribution and hyperfine interactions
(Elsevier Ltd, 2016)Pure Fe3O4 NPs and Oleylamin (OAm) capped MnxFe1-xFe2O4 (MnxFe1-xFe2O4@OAm) (0.2 ≤ x ≤ 1.0) nanocomposites (NCs) were synthesized by the polyol route. Lattice parameter increases with increasing Mn2+ concentration, due to ... -
A shape memory alloy based on photodiode for optoelectronic applications
(Elsevier Ltd, 2018)A photodiode was fabricated as a Schottky contact using Cu-Al-Mn shape memory alloy and p-Si substrate. The alloy was characterized by some characterization techniques such as (SEM), XRD and DSC. The electrical and ... -
Some aspects of thermally induced martensite in Fe-30% Ni-5% Cu alloy
(2007)Kinetical, morphological, crystallographical and several thermal properties of thermally induced martensite in the austenite phase ofFe–30% Ni–5% Cu alloy were investigated. Scanning electron microscope (SEM), transmission ... -
Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
(Elsevier B.V., 2019)In this work, martensite was made over the wide temperature ranges and the two forms of martensite mor-phology in Cu85.41Al9.97Mn4.62shape memory alloy (SMA) were β′and γ′martensite phases. The SMA wascharacterized by the ... -
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
(Elsevier B.V., 2016)Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10–300 K) with various heating rates between ... -
Electrical properties and hyperfine interactions of boron doped Fe3O4 nanoparticles
(Academic Press, 2015)The single spinel phase nano-structured particles of FeBxFe2-xO4 (x = 0.1, 0.2, 0.3, 0.4 and 0.5) were synthesized by the glycothermal method and the effect of B3+ substitution on structural and dielectric properties of ... -
Investigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films
(2014)Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room ... -
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
(2012)ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ... -
High pressure elastic properties of wurtzite aluminum nitrate
(Physical Society of the Republic of China, 2014)Aluminum nitrate is an indisputable material for current optoelectronic technology. Although much scientific effort has been devoted to understand the ground state elastic properties of aluminum nitrate, little is known ... -
Elastic and mechanical properties of cubic diamond under pressure
(Physical Society of the Republic of China, 2015)We report on some structural, elastic, and mechanical properties of cubic diamond under pressures up to 500 GPa. Unlike existing theoretical works, the second-generation reactive bond order (REBO) potential was used for ... -
A triazoloquinoxaline and benzodithiophene bearing low band gap copolymer for electrochromic and organic photovoltaic applications
(Elsevier Ltd, 2017)A new triazoloquinoxaline and benzodithiophene based copolymer was synthesized to investigate its electrochemical, optical and photovoltaic behaviors. According to the polymer design, combination of two acceptor units ... -
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
(Springer New York LLC, 2018)Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C- V) and ...
