ORCID "Yıldız, Dilber Esra / 0000-0003-2212-199X" Fizik Bölümü için listeleme
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Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Springer, 2019)The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ... -
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Gazi Univ, 2018)SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ... -
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
Yıldız, Dilber Esra; Güllü, Hasan Hüseyin; Toppare, Levent; Çırpan, Ali (Springer, 2020)The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ... -
Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi
Karaduman, Irmak; Barin, Özlem; Yıldız, Dilber Esra; Acar, Selim (Gazi Univ, 2016)Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO 2 environment clean and reliable use of the H-2 gas as the energy source of the future are expanded in various fields. In this ... -
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
Yıldız, Dilber Esra; Güllü, Hasan Hüseyin; Sarılmaz, Adem; Özel, Faruk; Koçyiğit, Adem; Yıldırım, Murat (Springer, 2020)Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ... -
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Elsevier, 2019)In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ... -
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
Koçyiğit, Adem; Yıldız, Dilber Esra; Sarılmaz, Adem; Özel, Feyyaz; Yıldırım, Murat (Springer, 2020)CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the ... -
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Turut, Abdülmecit; Yıldız, Dilber Esra; Karabulut, Abdülkerim; Orak, İkram (Springer, 2020)Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ... -
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (Springer, 2020)The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ... -
Electrical characterization of CdZnTe/Si diode structure
Doğru Balbaşı, Ciğdem; Terlemezoğlu, Makbule; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Parlak, Mehmet (Springer Heidelberg, 2020)Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ... -
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Gazi Univ, 2019)The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ... -
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Sürücü, Özge; Parlak, Mehmet (Springer, 2020)This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ... -
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Springer, 2019)In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ... -
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Springer, 2020)Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ...