ORCID "Parlak, Mehmet / 0000-0001-9542-5121" Fizik Bölümü için listeleme
-
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Elsevier, 2019)In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ... -
Electrical characterization of CdZnTe/Si diode structure
Doğru Balbaşı, Ciğdem; Terlemezoğlu, Makbule; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Parlak, Mehmet (Springer Heidelberg, 2020)Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ... -
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Sürücü, Özge; Parlak, Mehmet (Springer, 2020)This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ... -
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Springer, 2019)In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ...